Valence-band and surface electronic structure of CdTe

Valence-band electronic structure of Co3O4 epitaxy on CoO(100)

VALENCE BAND STRUCTURE OF PbTe

This paper is a review article covering our work in recent years on PbTe and the alloy semiconductor CdXPbl-,Te. It shows how measurements of the transport and optical properties of these materials support (1) the two valence band model for PbTe in which the principal light mass band is highly non-parabolic and the secondary heavy mass band is parabolic and (2) a value for the Hall-anisotropy f...

Electronic band structure of a Carbon nanotube superlattice

By employing the theoretical method based on tight-binding, we study electronic band structure of single-wall carbon nanotube (CNT) superlattices, which the system is the made of the junction between the zigzag and armchair carbon nanotubes. Exactly at the place of connection, it is appeared the pentagon–heptagon pairs as topological defect in carbon hexagonal network. The calculations are base...

Electronic band structure of a Carbon nanotube superlattice

By employing the theoretical method based on tight-binding, we study electronic band structure of single-wall carbon nanotube (CNT) superlattices, which the system is the made of the junction between the zigzag and armchair carbon nanotubes. Exactly at the place of connection, it is appeared the pentagon–heptagon pairs as topological defect in carbon hexagonal network. The calculations are base...

Valence band structure of BaCuSF and BaCuSeF

The origin of high hole conduction in BaCuQF Q=S,Se was investigated by photoemission measurements and full-potential linearized augmented plane wave band-structure calculations. In both compounds, the large dispersion near the top of the valence band is realized by admixed states of Cu 3d and S 3p or Se 4p orbitals, indicating that high hole mobility is possible. In addition, the valence band ...